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STL120N2VH5 - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology.

The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class.

Figure 1.

Key Features

  • Order code STL120N2VH5 VDSS 20 V RDS(on) max < 0.003 Ω ID 28 A.
  • Improved die-to-footprint ratio.
  • Very low profile package.
  • Very low thermal resistance.
  • Conduction losses reduced.
  • Switching losses reduced.
  • 2.5 V gate drive.
  • Very low threshold device.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL120N2VH5 N-channel 20 V, 0.002 Ω, 28 A STripFET™ V Power MOSFET in PowerFLAT™ 5x6 package Features Order code STL120N2VH5 VDSS 20 V RDS(on) max < 0.003 Ω ID 28 A ■ Improved die-to-footprint ratio ■ Very low profile package ■ Very low thermal resistance ■ Conduction losses reduced ■ Switching losses reduced ■ 2.5 V gate drive ■ Very low threshold device Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class. 1 2 3 4 PowerFLAT™ 5x6 Figure 1. Internal schematic diagram    $$$$ '333   "OTTOM6IEW   4OP6IEW !-6 Table 1.