Datasheet Summary
Automotive-grade N-channel 40 V, 2.9 mΩ typ., 55 A STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 package
- production data
Figure 1: Internal schematic diagram
Features
Order code STL120N4F6AG
VDS 40 V
RDS(on) max. 3.6 mΩ
ID 55 A
- AEC-Q101 qualified
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
- Wettable flank package
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Order code STL120N4F6AG
Table 1: Device...