STL17N3LLH6 Datasheet | STMicroelectronics

.. N-channel 30 V, 0.0038 Ω , 17 A PowerFLATTM(3.3x3.3) STripFETTM VI DeepGATETM Power MOSFET Features Type STL17N3LLH6 VDSS 30 V RDS(on) max 0.0045 Ω ID 17 A (1) 1. The value is rated according Rthj-pcb - - - - - RDS(on) - Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge Figure 1. Internal schematic diagram PowerFLAT™ (3.3 x 3.3) Application - Switching applications Description This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in a...