STL100N3LLH6 Datasheet | STMicroelectronics

.. N-channel 30 V, 0.0025 Ω, 17 A PowerFLAT™ (6x5) STripFET™ VI DeepGATE™ Power MOSFET Features Type STL100N3LLH6 VDSS 30 V RDS(on) max 0.0032 Ω ID 17 A (1) 1. The value is rated according Rthj-pcb - - - - - RDS(on) - Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge PowerFLAT™ ( 6x5 ) Application - Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in a...