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STL100N3LLH6 - N-Channel Power MOSFET

General Description

This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in a standard package, that makes it suitable for the most demanding DC-DC converter applications, where high power dens

Key Features

  • Type STL100N3LLH6 VDSS 30 V RDS(on) max 0.0032 Ω ID 17 A (1) 1. The value is rated according Rthj-pcb.
  • RDS(on).
  • Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge PowerFLAT™ ( 6x5 ).

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STL100N3LLH6 www.datasheet4u.com N-channel 30 V, 0.0025 Ω, 17 A PowerFLAT™ (6x5) STripFET™ VI DeepGATE™ Power MOSFET Features Type STL100N3LLH6 VDSS 30 V RDS(on) max 0.0032 Ω ID 17 A (1) 1. The value is rated according Rthj-pcb ■ ■ ■ ■ ■ RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge PowerFLAT™ ( 6x5 ) Application ■ Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.