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STL100N3LLH7 - Power MOSFETs N-channel 30V

General Description

This device utilizes the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Table 1.

Key Features

  • Type STL100N3LLH7 VDSS 30 V RDS(on) max 0.0035 Ω ID 25 A (1) 1. The value is rated according Rthj-pcb.
  • RDS(on).
  • Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness PowerFLAT™ ( 5x6 ).

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www.DataSheet4U.com STL100N3LLH7 N-channel 30 V, 0.0025 Ω , 25 A PowerFLAT™ (5x6) STripFET™ VII DeepGATE™ Power MOSFET Preliminary data Features Type STL100N3LLH7 VDSS 30 V RDS(on) max 0.0035 Ω ID 25 A (1) 1. The value is rated according Rthj-pcb ■ ■ ■ RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness PowerFLAT™ ( 5x6 ) Application ■ Switching applications Figure 1. Internal schematic diagram Description This device utilizes the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Table 1.