STL100N3LLH7 Description
This device utilizes the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 9 This is preliminary information on a new product now in development or undergoing evaluation.
STL100N3LLH7 Key Features
- RDS(on)
- Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness
- Switching