Datasheet Summary
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N-channel 30 V, 0.0025 Ω , 25 A PowerFLAT™ (5x6) STripFET™ VII DeepGATE™ Power MOSFET
Preliminary data
Features
Type STL100N3LLH7 VDSS 30 V RDS(on) max 0.0035 Ω ID 25 A (1)
1. The value is rated according Rthj-pcb
- -
- RDS(on)
- Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness
PowerFLAT™ ( 5x6 )
Application
- Switching applications Figure 1. Internal schematic diagram
Description
This device utilizes the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
Table 1.
Device summary
Marking...