STMicroelectronics STL210N4LF7AG
This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. This value is limited by package.| Part No. | STL210N4LF7AG |
|---|---|
| Datasheet | STL210N4LF7AG Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STL210N4LF7AG VDS 40 V RDS(on) max. 1.6 mΩ● AEC-Q101 qualified
● Among the lowest RDS(on) on the market
● Excellent FoM (figure of merit)
● Low Crss/Ciss ratio for EMI immunity
● High avalanche ruggedness
● Wettable flank package ID 120 A G(4)
APPLICATIONS
● Switching applications S(1, 2, 3) 12 34 Top View AM15540v2DESCRIPTION
Product status link STL210N4LF7AG Product summary Order code STL210N4LF7AG Marking 210N4LF7 Package PowerFLAT™ 5x6 Packing Tape and reel DS12887 - Rev 3 - December 2019 For further information contact your local STMicroelectronics sales office. STL210N4LF7AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID(1) Drain current (continuous) at Tc = 100 °C IDM(2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C IAV Avalanche current, repetitive or not repetitive (pulse width limited by maximum junc...
