STL210N4LF7AG Overview
Description
This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status link STL210N4LF7AG Product summary Order code STL210N4LF7AG Marking 210N4LF7 Package PowerFLAT™ 5x6 Packing Tape and reel DS12887 - Rev 3 - December 2019 For further information contact your local STMicroelectronics sales office.
Key Features
- AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
- Wettable flank package ID 120 A G(4)
