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STL210N4F7AG - N-channel Power MOSFET

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

  • Order code STL210N4F7AG V DS 40 V RDS(on) max 1.6 mΩ ID 120 A.
  • Designed for automotive.

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Full PDF Text Transcription

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STL210N4F7AG Automotive-grade N-channel 40 V, 1.3 mΩ typ., 120 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code STL210N4F7AG V DS 40 V RDS(on) max 1.6 mΩ ID 120 A  Designed for automotive applications and AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness  Wettable flank package Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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