STL210N4F7AG Overview
Key Specifications
Min Operating Temp: -55 °C
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL210N4F7AG Table 1: Device summary Marking Package 210N4F7 PowerFLAT™ 5x6 Packaging Tape and reel January 2016 DocID028773 Rev 1 This is information on a product in full.
Key Features
- Designed for automotive applications and AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
- Wettable flank package
