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STL24N60M2 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

General Description

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.

It is therefore suitable for the most demanding high efficiency converters.

Overview

STL24N60M2 N-channel 600 V, 0.186 Ω typ., 18 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet − production.

Key Features

  • 6  6  6  .
  •  %RWWRPĆYLHZ '  3RZHU)/$7ŒĆ[Ć+9 Figure 1. Internal schematic diagram D(3) G(1) S(2) AM01476v1 Order code VDS @ TJmax RDS(on) max ID STL24N60M2 650 V 0.21 Ω 18 A.
  • Extremely low gate charge.
  • Lower RDS(on) x area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener protected.