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STL24N65M2 - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.

Thanks to its strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Key Features

  • Order codes STL24N65M2 VDS 650 V RDS(on) max 0.250 Ω ID 14 A.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL24N65M2 N-channel 650 V, 0.205 Ω typ., 14 A MDmesh M2 Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - production data S(3) S(3) S(3) G(1) D(2) PowerFLAT™ 8x8 HV Figure 1: Internal schematic diagram D(3) G(1) Features Order codes STL24N65M2 VDS 650 V RDS(on) max 0.250 Ω ID 14 A  Extremely low gate charge  Excellent output capacitance (Coss) profile  100% avalanche tested  Zener-protected Applications  Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.