STL24N60M2 Datasheet | STMicroelectronics

N-channel 600 V, 0.186 Ω typ., 18 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 8x8 HV package - production data Features 6 6 6 - %RWWRPĆYLHZ ' 3RZHU)/$7ŒĆ[Ć+9 Figure 1. Internal schematic diagram D(3) G(1) S(2) AM01476v1 Order code VDS @ TJmax RDS(on) max ID 650 V 0.21 Ω 18 A - Extremely low gate charge - Lower RDS(on) x area vs previous generation - Low gate input resistance - 100% avalanche tested - Zener protected Applications - Switching applications Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET...