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STL24NM60N - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • Type STL24NM60N VDSS @ TJmax 650 V RDS(on) max < 0.215 Ω ID 16 A (1) ' $ 3 3 3 ".

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr STL24NM60N N-channel 600 V, 0.200 Ω , 16 A PowerFLAT™ 8x8 HV MDmesh™ II Power MOSFET Features Type STL24NM60N VDSS @ TJmax 650 V RDS(on) max < 0.215 Ω ID 16 A (1) ' $ 3 3 3 "OTTOMVIEW 1. The value is rated according to Rthj-case ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 0OWER&,!4˜X(6 Applications ■ Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.