STL30NF3LL Datasheet | STMicroelectronics

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique “STrip FET™” technology. The resulting transistor shows extremely low onresistance and minimal gate charge. The new Power FLAT™ package allows a significant reduction in board space without promising performance. Power FLAT™(6x5) (Chip Scale Package) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(#) IDM (l) PTOT Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 30 30 ± 16 30 19 120 80 0.64 - 55 to 150 Unit V V V A A A W W/°C °C (q) Pulse width limited by safe operating area (#) Limited by Wire Bonding November 2001 1/6 .. THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1.56 50 °C/W °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 16V Min. 30 1 10 ±100 Typ. Max. Unit V µA µA n A ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250µA VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 15A Min. 1 0.008 0.0095 0.010 0.013 Typ. Max. Unit V Ω Ω DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15V, ID = 15 A VDS = 25 V, f = 1 MHz, VGS = 0 Min. Typ. 30 2210 635 138 Max. Unit S p F p F p F 2/6 .. ELECTRICA...