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STL50DN6F7 Datasheet

Dual N-channel Power MOSFET

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STL50DN6F7
Dual N-channel 60 V, 9 mΩ typ., 57 A STripFET™ F7
Power MOSFET in a PowerFLAT™ 5x6 double island package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STL50DN6F7
VDS
60 V
RDS(on) max.
11 mΩ
ID
57 A
Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
This dual N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Order code
STL50DN6F7
Marking
50DN6F7
Table 1: Device summary
Package
PowerFLAT™ 5x6 double island
Packaging
Tape and reel
November 2015
DocID028132 Rev 2
This is information on a product in full production.
1/15
www.st.com


STMicroelectronics Electronic Components Datasheet

STL50DN6F7 Datasheet

Dual N-channel Power MOSFET

No Preview Available !

Contents
Contents
STL50DN6F7
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics(curve)......................................................... 5
3 Test circuits ..................................................................................... 7
4 Package information ....................................................................... 8
4.1 PowerFLAT 5x6 double island type R package information .............. 9
4.2 PowerFLAT™ 5x6 packing information ........................................... 12
5 Revision history ............................................................................ 14
2/15 DocID028132 Rev 2


Part Number STL50DN6F7
Description Dual N-channel Power MOSFET
Maker STMicroelectronics
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STL50DN6F7 Datasheet PDF






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