STL50N6F7 Datasheet | STMicroelectronics

N-channel 60 V, 9 mΩ typ., 60 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package - production data Figure 1: Internal schematic diagram Features Order code STL50N6F7 VDS 60 V RDS(on) max. 11 mΩ ID 60 A - Among the lowest RDS(on) on the market - Excellent figure of merit (FoM) - Low Crss/Ciss ratio for EMI immunity - High avalanche ruggedness Applications - Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL50N6F7 Marking...