STL50DN6F7 Datasheet | STMicroelectronics

Dual N-channel 60 V, 9 mΩ typ., 57 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 double island package - production data Figure 1: Internal schematic diagram Features Order code STL50DN6F7 VDS 60 V RDS(on) max. 11 mΩ ID 57 A - Among the lowest RDS(on) on the market - Excellent figure of merit (FoM) - Low Crss/Ciss ratio for EMI immunity - High avalanche ruggedness Applications - Switching applications Description This dual N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Orde...