STL52DN4LF7AG Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL52DN4LF7AG Table 1: Device summary Marking Package 52DN4LF7 PowerFLAT™ 5x6 double island December 2017 DocID029278 Rev 4 This is information on a product in full...
STL52DN4LF7AG Key Features
- AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
- Wettable flank package