STL50N6F7 Overview
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL50N6F7 Marking 50N6F7 Table 1: Device summary Package PowerFLATTM 5x6 Packaging Tape and reel November 2015 DocID028126 Rev 2 This is information on a product in...
STL50N6F7 Key Features
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness