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STL57N65M5 - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the wellknown PowerMESH™ horizontal layout.

Key Features

  • Order code STL57N65M5 VDS @ TJmax 710 V RDS(on) max. 0.069Ω ID 22.5 A.
  • Extremely low RDS(on).
  • Low gate charge and input capacitance.
  • Excellent switching performance.
  • 100% avalanche tested.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL57N65M5 N-channel 650 V, 0.061 Ω typ., 22.5 A MDmesh™ M5 Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - production data 5 4 32 1 PowerFLAT™ 8x8 HV Figure 1: Internal schematic diagram Drain(5) Gate(1) Features Order code STL57N65M5 VDS @ TJmax 710 V RDS(on) max. 0.069Ω ID 22.5 A  Extremely low RDS(on)  Low gate charge and input capacitance  Excellent switching performance  100% avalanche tested Applications  Switching applications Description This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the wellknown PowerMESH™ horizontal layout. The resulting product offers extremely low onresistance, making it particularly suitable for applications requiring high power and superior efficiency.