STL62P3LLH6 Datasheet, STMicroelectronics

Order code STL62P3LLH6 VDS -30 V RDS(on) max 10.5 mΩ ID -62 A
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low gate d.

* Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 techno.

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STL62P3LLH6 . Table 1: Device summary Marking .