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STL62P3LLH6 - P-CHANNEL POWER MOSFET

General Description

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

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Key Features

  • Order code STL62P3LLH6 VDS -30 V RDS(on) max 10.5 mΩ ID -62 A.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL62P3LLH6 P-channel -30 V, 9 mΩ typ., -62 A STripFET™ H6 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code STL62P3LLH6 VDS -30 V RDS(on) max 10.5 mΩ ID -62 A  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STL62P3LLH6 . Table 1: Device summary Marking Package 62P3LLH6 PowerFLATTM 5x6 Packing Tape and reel October 2016 DocID025836 Rev 6 This is information on a product in full production.