STL60N32N3LL Datasheet - ST Microelectronics

STL60N32N3LL Power MOSFETs

This product utilizes latest generations of design rules of ST’s proprietary STripFET™ V and STripFET™ VI DeepGATE technology. The lowest available RDS(on) *Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is .

STL60N32N3LL Features

* Type STL60N32N3LL

* VDSS Q1 Q2 30 V 30 V RDS(on) ID < 0.012 Ω 12 A < 0.008 Ω 15 A RDS(on)

* Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses PowerFLAT™5x6 asymmetrical d

STL60N32N3LL_STMicroelectronics.pdf