STL100N3LLH7 Datasheet - ST Microelectronics

Power MOSFETs N-channel 30V

STL100N3LLH7 Features

* Type STL100N3LLH7 VDSS 30 V RDS(on) max 0.0035 Ω ID 25 A (1) 1. The value is rated according Rthj-pcb

* RDS(on)

* Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness PowerFLAT™ ( 5x6 ) Application

* Switching applications Figure 1. Interna

STL100N3LLH7 General Description

This device utilizes the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Table 1. Device summary Marking 100N3LLH7 Package PowerFLAT™ (5x6) Packaging Tape and reel Order cod.

STL100N3LLH7 Datasheet (546.44 KB)