STL17N3LLH6

N-Channel Power MOSFET

ST Microelectronics

STL17N3LLH6 Features

* Type STL17N3LLH6 VDSS 30 V RDS(on) max 0.0045 Ω ID 17 A (1) 1. The value is rated according Rthj-pcb

* RDS(on)

* Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge Figure 1.

STL17N3LLH6 General Description

This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in a standard package, that makes it suitable for the most demanding DC-DC converter applications, where high power den.

STL17N3LLH6 Datasheet (220.08 KB)