STL17N3LLH6 Datasheet - ST Microelectronics

STL17N3LLH6 N-Channel Power MOSFET

This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in a standard package, that makes it suitable for the most demanding DC-DC converter applications, where high power den.

STL17N3LLH6 Features

* Type STL17N3LLH6 VDSS 30 V RDS(on) max 0.0045 Ω ID 17 A (1) 1. The value is rated according Rthj-pcb

* RDS(on)

* Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge Figure 1.

STL17N3LLH6_STMicroelectronics.pdf