STL100N3LLH6 Datasheet - ST Microelectronics

STL100N3LLH6 N-Channel Power MOSFET

This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in a standard package, that makes it suitable for the most demanding DC-DC converter applications, where high power dens.

STL100N3LLH6 Features

* Type STL100N3LLH6 VDSS 30 V RDS(on) max 0.0032 Ω ID 17 A (1) 1. The value is rated according Rthj-pcb

* RDS(on)

* Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge PowerFLA

STL100N3LLH6_STMicroelectronics.pdf