Datasheet Details
| Part number | STN1HNC60 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 200.51 KB |
| Description | N-CHANNEL MOSFET |
| Datasheet | STN1HNC60_STMicroelectronics.pdf |
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Overview: www.DataSheet4U.com N-CHANNEL 600V - 7Ω - 0.4A - SOT-223 PowerMesh™II MOSFET TYPE STN1HNC60 s s s s s STN1HNC60 VDSS 600 V RDS(on) <8Ω ID 0.
| Part number | STN1HNC60 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 200.51 KB |
| Description | N-CHANNEL MOSFET |
| Datasheet | STN1HNC60_STMicroelectronics.pdf |
|
|
|
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.
The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
APPLICATIONS AC ADAPTORS AND BATTERY CHARGERS s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
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