Datasheet4U Logo Datasheet4U.com

STN1N20 - N-CHANNEL MOSFET

General Description

leteThis device is an N-channel Power MOSFET odeveloped using the latest high voltage MESH sOVERLAY™ process.

The new patented STrip blayout coupled with the company’s proprietary Oedge termination structure, makes it suitable in ) -converters for lighting applications.

Figure 1.

Key Features

  • Type VDSS RDS(on) max ID STN1N20 200 V < 1.5 Ω t(s).
  • 100% avalanche tested 1A uc.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STN101050BL25 TVS Diode ESD suppressor EATON
STN1012 MOSFET Stanson Technology
STN1100 Multiprotocol OBD-II to UART Interpreter ScanToo
STN1110 Multiprotocol OBD to UART Interpreter OBD Solutions
STN1110-I Multiprotocol OBD to UART Interpreter OBD Solutions

Other Datasheets by STMicroelectronics

Part Number Description
STN1NB80 N-CHANNEL MOSFET
STN1NC60 N-CHANNEL MOSFET
STN1NF10 N-CHANNEL MOSFET
STN1NF20 N-CHANNEL POWER MOSFET
STN1NK60Z N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STN1N20 N-channel 200 V, 1.2 Ω, 1 A, SOT-223 MESH OVERLAY™ Power MOSFET Features Type VDSS RDS(on) max ID STN1N20 200 V < 1.5 Ω t(s)■ 100% avalanche tested 1A ucApplication rod■ Switching applications PDescription leteThis device is an N-channel Power MOSFET odeveloped using the latest high voltage MESH sOVERLAY™ process. The new patented STrip blayout coupled with the company’s proprietary Oedge termination structure, makes it suitable in ) -converters for lighting applications. 4 3 2 1 SOT-223 Figure 1. Internal schematic diagram $  roduct(s ' Obsolete P 3 !-V Table 1. Device summary Order code STN1N20 Marking N1N20 Package SOT-223 Packaging Tape and reel June 2011 Doc ID 6772 Rev 3 1/12 www.st.