STMicroelectronics STN1N20
N-CHANNEL MOSFET
FEATURES
Type VDSS RDS(on) max ID STN1N20 200 V < 1.5 Ω t(s)● 100% avalanche tested 1A ucApplication rod● Switching applications PDescription leteThis device is an N-channel Power MOSFET odeveloped using the latest high voltage MESH sOVERLAY™ process. The new patented STrip blayout coupled with the company’s proprietary Oedge termination structure, makes it suitable in ) -converters for lighting applications. 4 3 2 1 SOT-223 Figure 1. Internal schematic diagram $ roduct(s ' Obsolete P 3 !- V Table 1. Device summary Order code STN1N20 Marking N1N20 Package SOT-223 Packaging Tape and reel June 2011 Doc ID 6772 Rev 3 1/12 12 Contents Contents STN1N20 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .