STN1N20 mosfet equivalent, n-channel mosfet.
Type
VDSS RDS(on) max
ID
STN1N20
200 V
< 1.5 Ω
t(s)
* 100% avalanche tested
1A
ucApplication rod
* Switching applications
PDescription leteThis device is .
PDescription leteThis device is an N-channel Power MOSFET odeveloped using the latest high voltage MESH sOVERLAY™ proce.
leteThis device is an N-channel Power MOSFET odeveloped using the latest high voltage MESH sOVERLAY™ process. The new patented STrip blayout coupled with the company’s proprietary Oedge termination structure, makes it suitable in ) -converters for li.
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