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STO67N60M6 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STO67N60M6 Datasheet N-channel 600 V, 48 mΩ typ., 34 A MDmesh M6 Power MOSFET in a TO‑LL package TO-LL type A2 Drain (TAB) Gate(1) Driver source (2) Power source (3, 4, 5, 6,.

General Description

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.

STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

Product status link STO67N60M6 Device summary Order code STO67N60M6 Marking 67N60M6 Package TO-LL type A2 Packing Tape and reel DS13208 - Rev 2 - April 2021 For further information contact your local STMicroelectronics sales office.

Key Features

  • Order code VDS RDS(on) max. ID STO67N60M6 600 V 54 mΩ 34 A.
  • Reduced switching losses.
  • Lower RDS(on) per area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected.
  • High creepage package.
  • Excellent switching performance thanks to the extra driving source pin.

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