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STO67N60DM6 - N-channel Power MOSFET

General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.

Key Features

  • Order code VDS RDS(on) max. ID STO67N60DM6 600 V 59 mΩ 58 A.
  • Fast-recovery body diode.
  • Lower RDS(on) per area vs previous generation.
  • Low gate charge, input capacitance and resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

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Full PDF Text Transcription for STO67N60DM6 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STO67N60DM6. For precise diagrams, and layout, please refer to the original PDF.

STO67N60DM6 Datasheet N-channel 600 V, 48 mΩ typ., 58 A MDmesh DM6 Power MOSFET in a TO‑LL package TO-LL type A2 Drain (TAB) Gate(1) Driver source (2) Power source (3, 4,...

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O-LL type A2 Drain (TAB) Gate(1) Driver source (2) Power source (3, 4, 5, 6, 7,8) N-chG1DS2PS345678DTABZ Features Order code VDS RDS(on) max. ID STO67N60DM6 600 V 59 mΩ 58 A • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.

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