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STO67N60M6 - N-channel Power MOSFET

General Description

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.

Key Features

  • Order code VDS RDS(on) max. ID STO67N60M6 600 V 54 mΩ 34 A.
  • Reduced switching losses.
  • Lower RDS(on) per area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected.
  • High creepage package.
  • Excellent switching performance thanks to the extra driving source pin.

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Full PDF Text Transcription for STO67N60M6 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STO67N60M6. For precise diagrams, and layout, please refer to the original PDF.

STO67N60M6 Datasheet N-channel 600 V, 48 mΩ typ., 34 A MDmesh M6 Power MOSFET in a TO‑LL package TO-LL type A2 Drain (TAB) Gate(1) Driver source (2) Power source (3, 4, 5...

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LL type A2 Drain (TAB) Gate(1) Driver source (2) Power source (3, 4, 5, 6, 7,8) N-chG1DS2PS345678DTABZ Features Order code VDS RDS(on) max. ID STO67N60M6 600 V 54 mΩ 34 A • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected • High creepage package • Excellent switching performance thanks to the extra driving source pin Applications • Switching applications • LLC converters • Boost PFC converters Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ M

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