STP10N60M2 Datasheet - STMicroelectronics

N-CHANNEL POWER MOSFET

STP10N60M2 Features

* Order codes VDS @ TJ max. RDS(on) max. STB10N60M2 STD10N60M2 650 V 0.60 Ω STP10N60M2

* Extremely low gate charge

* Excellent output capacitance (Coss) profile

* 100% avalanche tested

* Zener-protected ID 7.5 A Package D²PAK DPAK TO-220 Applications

STP10N60M2 General Description

These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.

STP10N60M2 Datasheet (609.01 KB)

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Datasheet Details

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STP10N60M2

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STMicroelectronics ↗

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609.01 KB

Description:

N-channel power mosfet.
STB10N60M2, STD10N60M2, STP10N60M2 Datasheet N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a D²PAK, DPAK and TO-220 packages TAB 2 3 .

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STP10N60M2 N-CHANNEL POWER MOSFET STMicroelectronics

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STP10N60M2 Features

STP10N60M2 General Description

Datasheet Details

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