STP10N105K5 Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Device summary Order codes Marking Package Packaging STF10N105K5 STP10N105K5 STW1.
STP10N105K5 Key Features
- Industry’s lowest RDS(on)
- Industry’s best figure of merit (FoM)
- Ultra low gate charge
- 100% avalanche tested
- Zener-protected