STMicroelectronics STP10N60M2
600V 7.5A N-Channel Power MOSFET
| Part No. | STP10N60M2 |
|---|---|
| Datasheet | STP10N60M2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V 7.5A N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes VDS @ TJ max. RDS(on) max. STB10N60M2 STD10N60M2 650 V 0.60 Ω STP10N60M2● Extremely low gate charge
● Excellent output capacitance (Coss) profile
● 100% avalanche tested
● Zener-protected ID 7.5 A Package D²PAK DPAK TO-220
APPLICATIONS
G(1)● Switching applications
DESCRIPTION
S(3) AM01476v1_tab These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status links STB10N60M2 STD10N60M2 STP10N60M2 DS9703 - Rev 5 - July 2025 For further information, contact your local STMicroelectronics sales office. STB10N60M2, STD10N60M2, STP10N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous)...
