STP10NM50N mosfet equivalent, n-channel power mosfet.
Type
VDSS (@Tjmax)
RDS(on) max
ID
STD10NM50N STF10NM50N STP10NM50N
550 V
< 0.63 Ω 7 A
* 100% avalanche tested
* Low input capacitance and gate charge
.
* Switching applications
Description
These devices are N-channel Power MOSFETs developed using the second generatio.
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and .
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