* Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 package. D G D S S TP S E R IE S TO-220 G S ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Limit VDS Drain-Source Voltage VGS Gate-Source Voltage 100 ±20 ID
STP10N03
SamHop Microelectronics
99.57 KB
N-channel enhancement mode field effect transistor.
STP10N03Green Product Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS .
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