Datasheet4U Logo Datasheet4U.com

STP12IE95F4 Datasheet Emitter Switched Bipolar Transistor

Manufacturer: STMicroelectronics

General Description

The STP12IE95F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications.

It is designed for use in Gate Driven based topologies.

00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 0 00 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 0 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 000 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 Order codes Part Number STP12IE95F4 Marking P12IE95F4 Package TO220FP-4L Packing Tube January 2007 Rev 1 1/11 www.st.com 11 This is preliminary information on a new product now in development or undergoing evaluation.

Overview

www.DataSheet4U.com STP12IE95F4 Emitter Switched Bipolar Transistor ESBT® 950 V - 12 A - 0.

Key Features

  • VCS(ON) 1V.
  • IC 12A RCS(ON) 0.083 W High voltage / high current Cascode configuration Low equivalent on resistance Very fast-switch up to 150 kHz Squared RBSOA up to 950V Very low Ciss driven by RG = 47Ω Very low turn-off cross over time TO220FP-4L.