STP130N8F7 Overview
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(3) Order code STP130N8F7 AM01475v1_noZen Table 1: Device summary Marking Package 130N8F7 TO-220 Packing Tube March 2017 DocID027247 Rev 2 This is information on a product in...
STP130N8F7 Key Features
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
