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STP160N3LL Datasheet N-channel MOSFET

Manufacturer: STMicroelectronics

General Description

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Order code STP160N3LL Table 1: Device summary Marking Package 160N3LL TO-220 Packing Tube June 2015 DocID025073 Rev 3 This is information on a product in full production.

Overview

STP160N3LL N-channel 30 V, 2.5 mΩ typ., 120 A STripFET™ H6 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic.

Key Features

  • Order code VDS RDS(on) max. ID PTOT STP160N3LL 30 V 3.2 mΩ 120 A 136 W.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss.