STP160N4LF6
STP160N4LF6 is N-CHANNEL POWER MOSFET manufactured by STMicroelectronics.
N-channel 40 V, 0.0021 mΩ typ., 120 A, STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package
- production data
TO-220
3 2 1
Features
Order code VDS RDS(on) max ID PTOT STP160N4LF6 40 V 0.0029 Ω 120 A 150 W
- RDS(on)
- Qg industry benchmark
- Extremely low on-resistance RDS(on)
- Logic level drive
- High avalanche ruggedness
- 100% avalanche tested
Figure 1. Internal schematic diagram
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Applications
- Switching applications
Description
This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all...