Download STP160N4LF6 Datasheet PDF
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STP160N4LF6 Description

This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 6  $0Y Order code STP160N4LF6 Table.

STP160N4LF6 Key Features

  • RDS(on)
  • Qg industry benchmark
  • Extremely low on-resistance RDS(on)
  • Logic level drive
  • High avalanche ruggedness
  • 100% avalanche tested