STMicroelectronics STP160N4LF6
This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.| Part No. | STP160N4LF6 |
|---|---|
| Datasheet | STP160N4LF6 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max ID PTOT STP160N4LF6 40 V 0.0029 Ω 120 A 150 W● RDS(on) * Qg industry benchmark
● Extremely low on-resistance RDS(on)
● Logic level drive
● High avalanche ruggedness
● 100% avalanche tested Figure 1. Internal schematic diagram ' Ć7$% *
APPLICATIONS
● Switching applicationsDESCRIPTION
6 $0 Y Order code STP160N4LF6 Table 1. Device summary Marking Package 160N4LF6 TO-220 Packaging Tube April 2014 This is information on a product in full production. DocID026266 Rev 1 1/14 Contents Contents STP160N4LF6 1 Electrical ratings . . .
