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STP165N10F4 - N-CHANNEL POWER MOSFET

General Description

The STP165N10F4 is an N-channel enhancement mode Power MOSFET built with STripFET™ DeepGATE™ technology with a new gate structure.

The product is tailored to minimize on-resistance.

Figure 1.

Key Features

  • Order code STP165N10F4 VDSS 100 V RDS(on) max ID < 5.5 mΩ 120 A.
  • N-channel enhancement mode.
  • 100% avalanche rated.
  • Low gate charge.
  • Very low on-resistance.

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STP165N10F4 N-channel 100 V, 4.4 mΩ, 120 A TO-220 STripFET™ DeepGATE™ Power MOSFET Features Order code STP165N10F4 VDSS 100 V RDS(on) max ID < 5.5 mΩ 120 A ■ N-channel enhancement mode ■ 100% avalanche rated ■ Low gate charge ■ Very low on-resistance Application Switching applications Description The STP165N10F4 is an N-channel enhancement mode Power MOSFET built with STripFET™ DeepGATE™ technology with a new gate structure. The product is tailored to minimize on-resistance. 3 2 1 TO-220 Figure 1. Internal schematic diagram $ ' Table 1. Device summary Order code STP165N10F4 Marking 165N10F4 3 !-V Package TO-220 Packaging Tube November 2010 Doc ID 15781 Rev 2 1/12 www.st.com 12 Contents Contents STP165N10F4 1 Electrical ratings . . . . . . . . . . . . .