STMicroelectronics STP160N3LL
This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.| Part No. | STP160N3LL |
|---|---|
| Datasheet | STP160N3LL Download |
| Manufacturer |  STMicroelectronics |
| Description | 30V 120A N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID PTOT STP160N3LL 30 V 3.2 mΩ 120 A 136 W● Very low on-resistance
● Very low gate charge
● High avalanche ruggedness
● Low gate drive power loss
APPLICATIONS
● Switching applicationsDESCRIPTION
Order code STP160N3LL Table 1: Device summary Marking Package 160N3LL TO-220 Packing Tube June 2015 DocID025073 Rev 3 This is information on a product in full production. 1/13 Contents Contents STP160N3LL 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ...................................
