Datasheet Summary
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N-CHANNEL 200V
- 0.15Ω
- 19A
- TO-220/TO-220FP/I2PAK PowerMESH™ MOSFET
TYPE STP19NB20 STP19NB20FP STB19NB20-1 s s s s s
STP19NB20
- STP19NB20FP STB19NB20-1
VDSS 200 V 200 V 200 V
RDS(on) < 0.18 Ω < 0.18 Ω < 0.18 Ω
ID 19 A 10 A 19 A
3 1 2
TYPICAL RDS(on) = 0.15 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
TO-220
TO-220FP
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprieraty edge termination structure, gives the lowest...