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STP2N60FI Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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STP2N60
STP2N60FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STP2N60
STP2N60FI
VDSS
600 V
600 V
R DS( on)
< 3.5
< 3.5
ID
2.9 A
2.2 A
s TYPICAL RDS(on) = 3.2
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S Drain-source Voltage (VGS = 0)
VDG R Drain- gate Voltage (RGS = 20 k)
VGS Gate-source Voltage
ID Drain Current (continuous) at T c = 25 oC
ID Drain Current (continuous) at T c = 100 oC
IDM() Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
December 1996
Val ue
STP2N60
S T P2 N6 0F I
600
600
± 20
2.9 2.2
1.7 1.3
11 11
70 35
0. 56
0. 28
2000
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/10


STMicroelectronics Electronic Components Datasheet

STP2N60FI Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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STP2N60/FI
THERMAL DATA
Rthj-case
Rthj- amb
Rt hc- sin k
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
1. 78
ISOWATT220
3. 57
6 2. 5
0. 5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symb ol
IA R
EAS
EAR
IA R
Pa ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(st arting Tj = 25 oC, ID = IAR, VD D = 50 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
Max Value
2.9
105
3.5
1.7
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Conditions
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA VG S = 0
IDSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 oC
IG SS
Gate-body Leakage
Current (VD S = 0)
VGS = ± 20 V
Min.
600
Typ.
Max.
Unit
V
25
250
± 100
µA
µA
nA
ON ()
Symb ol
VG S(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 1.5 A
R esist anc e
On St ate Drain Current VDS > ID( on) x RD S(on) max
VGS = 10 V
Min.
2
Typ.
3
3.2
Max.
4
3.5
Unit
V
2.9 A
DYNAMIC
Symb ol
gfs ()
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID( on) x RD S(on) max ID = 1. 5 A
Min.
1
Typ.
2.4
Max.
Unit
S
VDS = 25 V f = 1 MHz VG S = 0
450 600
62 85
23 35
pF
pF
pF
2/10


Part Number STP2N60FI
Description N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Maker STMicroelectronics
Total Page 10 Pages
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