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STMicroelectronics Electronic Components Datasheet

STP30NS15LFP Datasheet

N-CHANNEL Power MOSFET

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STP30NS15LFP
N-CHANNEL 150V - 0.085 - 10A TO-220FP
MESH OVERLAY™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STP30NS15LFP 150 V
<0.1
10 A
s TYPICAL RDS(on) = 0.085
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an advanced
family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprietary edge termination
structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteristics.
www.DataSheet4U.com
APPLICATIONS
s SWITCHING “S” CAPACITOR
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
EAS(1) Single Pulse Avalanche Energy
dv/dt (2) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
July 2003
.
Value
150
150
± 15
10
7
40
30
0.2
300
2.4
Unit
V
V
V
A
A
A
W
W/°C
mJ
V/ns
-55 to 175
°C
(1) Starting Tj = 25 oC, ID = 15A, VDD= 75V
(2) ISD 35A, di/dt 300A/µs, VDD V(BR)DSS, Tj TJMAX.
1/9


STMicroelectronics Electronic Components Datasheet

STP30NS15LFP Datasheet

N-CHANNEL Power MOSFET

No Preview Available !

STP30NS15LFP
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
5
62.5
300
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ.
V(BR)DSS Drain-source Breakdown
Voltage
ID = 250 µA, VGS = 0
150
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 15V
°C/W
°C/W
°C
Max.
Unit
V
1
10
±100
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
VGS = 5 V
ID = 5 A
ID = 5 A
Min.
1
Typ.
2
0.085
0.1
Max.
3
0.1
0.112
Unit
V
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 20 V
ID = 7 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
6
1080
170
105
Max.
Unit
S
pF
pF
pF
2/9


Part Number STP30NS15LFP
Description N-CHANNEL Power MOSFET
Maker STMicroelectronics
Total Page 9 Pages
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