STP3LN80K5 Datasheet, STMicroelectronics

Order code STP3LN80K5 STU3LN80K5 V DS 800 V RDS(on) max 3.25 Ω ID 2A
* Industry’s lowest RDS(on) x area
* Industry’s best FoM (figure of merit)
* Ultra-lo.

* Switching applications Description These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 te.

These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring su.