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STMicroelectronics Electronic Components Datasheet

STP3NC50 Datasheet

N-CHANNEL MOSFET

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STP3NC50
N-CHANNEL 500V - 3- 2.8A TO-220
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STP3NC50
500 V
<4
2.8 A
s TYPICAL RDS(on) = 3
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
www.DataSheet4U.coms DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM (1)
PTOT
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 k)
Gate- source Voltage
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
.
May 2001
Value
Unit
500 V
500 V
±30 V
2.8 A
1.8 A
11.2 A
75 W
0.6 W/°C
3 V/ns
–60 to 150
°C
150 °C
(1)ISD 2.8A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX
1/8
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STMicroelectronics Electronic Components Datasheet

STP3NC50 Datasheet

N-CHANNEL MOSFET

No Preview Available !

www.DataSheet4U.com
STP3NC50
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl Maximum Lead Temperature For Soldering Purpose
1.67
62.5
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
2.8
110
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
500
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
www.DataSheet4U.comGate Threshold Voltage
Test Conditions
VDS = VGS, ID = 250µA
Min.
2
Typ.
3
Max.
4
Static Drain-source On
Resistance
VGS = 10V, ID = 1.4 A
34
Unit
V
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 1.4A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
2
260
45
5
Max.
Unit
S
pF
pF
pF
2/8
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Part Number STP3NC50
Description N-CHANNEL MOSFET
Maker ST Microelectronics
Total Page 8 Pages
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