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STMicroelectronics Electronic Components Datasheet

STP3NC60FP Datasheet

N-CHANNEL MOSFET

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STP3NC60
STP3NC60FP
N-CHANNEL 600V - 3.3- 3A TO-220/TO-220FP
PowerMeshII MOSFET
TYPE
VDSS
RDS(on)
ID
STP3NC60
600 V
<3.6
3A
STP3NC60FP
600V
<3.6
2A
s TYPICAL RDS(on) = 3.3
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
www.DataSheet4U.coms HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
()Pulse width limited by safe operating area
May 2000
Value
STP3NC60 STP3NC60FP
600
600
±30
33
1.9 1.9(*)
12 12(*)
80 40
0.64 0.32
3.5
- 2000
–60 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
(1)ISD 3A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
(*)Limited only by maximum temperature allowed
1/9
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STMicroelectronics Electronic Components Datasheet

STP3NC60FP Datasheet

N-CHANNEL MOSFET

No Preview Available !

www.DataSheet4U.com
STP3NC60/FP
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
1.56
TO-220FP
3.12
62.5
0.5
300
°C/W
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
3
100
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
600
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
ID(on)
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Parameter
Test Conditions
Min. Typ. Max.
Gate Threshold Voltage
VDS = VGS, ID = 250µA
234
Static Drain-source On
Resistance
VGS = 10V, ID = 1.5 A
3.3 3.6
On State Drain Current
VDS > ID(on) x RDS(on)max,
VGS = 10V
3
Unit
V
A
DYNAMIC
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 1.5A
Min.
VDS = 25V, f = 1 MHz, VGS = 0
Typ.
2
400
57
7
Max.
Unit
S
pF
pF
pF
2/9
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Part Number STP3NC60FP
Description N-CHANNEL MOSFET
Maker ST Microelectronics
Total Page 9 Pages
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