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STMicroelectronics Electronic Components Datasheet

STP3NC70ZFP Datasheet

N-CHANNEL MOSFET

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STP3NC70Z
STP3NC70ZFP
N-CHANNEL 700V - 4.1- 2.5A TO-220/TO-220FP
Zener-Protected PowerMESH™III MOSFET
TYPE
VDSS
RDS(on)
ID
STP3NC70Z
STP3NC70ZFP
700V
700V
< 4.7
< 4.7
2.5 A
2.5 A
s TYPICAL RDS(on) = 4.1
s EXTREMELY HIGH dv/dt AND CAPABILITY
GATE TO - SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
s VERY LOW GATE INPUT RESISTANCE
3
2
1
s GATE CHARGE MINIMIZED
DESCRIPTION
TO-220
TO-220FP
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrat-
ing back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capa-
bility with higher ruggedness performance as re-
quested by a large variety of single-switch
applications. www.DataSheet4U.com
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
IGS Gate-source Current (DC)
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
June 2001
Value
Unit
STP3NC70Z STP3NC70ZFP
700 V
700 V
± 25 V
2.5
2.5 (*)
A
1.6
1.6 (*)
A
10 10 A
65 35 W
0.52 0.28 W/°C
±50 mA
1.5 KV
3 V/ns
-
2500
V
–65 to 150
°C
150 °C
(1) ISD 2.5A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX
(*) Limited by Maximum Temperature allowed
1/10
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STMicroelectronics Electronic Components Datasheet

STP3NC70ZFP Datasheet

N-CHANNEL MOSFET

No Preview Available !

www.DataSheet4U.com
STP3NC70Z/STP3NC70ZFP
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
TO-220
1.92
62.5
300
TO-220FP
3.57
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
2.5
150
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
700
BVDSS/TJ Breakdown Voltage Temp.
Coefficient
ID = 1 mA, VGS = 0
0.8
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
ON (1)
Gate-body Leakage
Current (VDS = 0)
VGS = ±20V
±10
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Symbol
Parameter
Test Conditions
Min. Typ. Max.
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250µA
345
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 1.25 A
4.1 4.7
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
V/°C
µA
µA
µA
Unit
V
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 1.25A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
2
530
50
7
Max.
Unit
S
pF
pF
pF
2/10
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Part Number STP3NC70ZFP
Description N-CHANNEL MOSFET
Maker ST Microelectronics
Total Page 10 Pages
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