STP3NK90Z Datasheet | STMicroelectronics

N-channel 900 V, 3.6 Ω typ., 3 A SuperMESH Power MOSFET in a TO-220 package Features TO-220 1 23 Order code RDS(on) max. 900 V 4.8 Ω 3A - 100% avalanche tested - Gate charge minimized - Very low intrinsic capacitance - Zener-protected D(2, TAB) Applications - Switching applications G(1) Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed S(3) using the SuperMESH technology by STMicroelectronics, an optimization of the well- AM01476v1_tab established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the...