| Part number | STP3N100 |
|---|---|
| Datasheet | STP3N100_STMicroelectronics.pdf |
| File Size | 216.37 KB |
| Manufacturer | STMicroelectronics |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
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Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V D S = 0) V GS = ± 20 V T c = 125 oC ON (∗ ) Symbol V G S(th) R DS( on) I D( on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10V Test Conditions ID = 250 µ A ID = 1.5 A 3.5 Min. 4 5Ω Ω A Unit V V DS > ID( on) x RD S(on) max V...
See all STMicroelectronics datasheets
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