STP3N80K5 Key Features
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
- Part: STP3N80K5
- Manufacturer: STMicroelectronics (official site)
- Size: 854.50 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STP3N100 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STP3N100FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STP3N150 | N-channel MOSFET |
| STP3N62K3 | N-channel Power MOSFET |
| STP3NB100 | N-CHANNEL PowerMESH MOSFET |
STP3N80K5 Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STD3N80K5 STF3N80K5 STP3N80K5 STU3N80K5 Table.